| 摘要 |
PURPOSE:To obtain an electric field injection type light emitting element which is long in service life and high in luminance and able to cover all visible ray region by a method wherein a light emitting layer provided with a diamond thin film whose surface is flat and which is synthesized through a vapor phase method is provided. CONSTITUTION:An electric field injection type light emitting element is formed making a diamond thin film provided with a flat face serve as the component layer of a light emitting layer. In the light emitting element concerned, a transparent electrode 2 of SnO2, ITO, or the like is provided onto a transparent substrate 1 of quartz, light transmitting alumina ceramic, or the like. An electrode 4 formed of one or more kinds of metal is provided onto a diamond layer 3, and a direct or an alternating voltage power supply 5 is connected to the transparent electrode 2. A flat diamond thin film can be obtained in such a manner that Si3N4 is deposited first as thick as 0.6-1mum on a diamond thin film whose surface is still rugged, then the surface of the diamond thin film is etched by the use of an Ar<+> ion beam or an O2 plasma beam to be flat. When the surface of the thin film is polished by iron, cobalt, or the like, it is rubbed with an iron plate heated to 500 deg.C or so to be flat. |
