发明名称 HIGH MOUNTING DENSITY TYPE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To enable a semiconductor device to be improved in mounting density and to be easily wired by a method wherein the electrode terminals of an upper and a lower chip are individually or commonly used and connected to the inner leads of a lead frame of a base material by wiring. CONSTITUTION:A chip 1 is larger than a chip 2 in planar area, and power supply terminals 4 are arranged on the planer peripheral part of the chip 1, so that the chips 1 and 2 can be constituted in one piece by bringing the chip 2 into close contact with the chip 1 and made very small in housing area. At bonding, the electrode terminals 4 and 5 can be individually or commonly connected to inner leads 6, so that the wiring of a semiconductor device of this design can be easily and orderly made.</p>
申请公布号 JPH03165550(A) 申请公布日期 1991.07.17
申请号 JP19890305678 申请日期 1989.11.24
申请人 HITACHI CABLE LTD 发明人 YASHIRO SEIJI
分类号 H01L25/18;H01L25/065;H01L25/07 主分类号 H01L25/18
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