BONDING PAD USED IN SEMICONDUCTOR DEVICE

摘要

A polysilicon film (103) is formed on an Si substrate (101) through an insulating oxide film (102), and a composite film (104) constituted by oxide and nitride films is formed on the polysilicon film (103). A polycide layer (105) is formed on the composite film (104), and a metal electrode layer (110) serving as a bonding pad (108) is formed on the polycide layer (105) through a barrier metal layer (109).