发明名称 |
Method of making a nonvolatile memory cell with field-plate switch |
摘要 |
An array of nonvolatile memory cells are formed at a face of a semiconductor body, the cells including source regions and including drain regions that are part of a common drain column conductor. Each cell has first and second sub-channel regions between source and drain. The conductivity of the first sub-channel regions of each cell is controlled by a field-plate conductor formed over and insulated from the first sub-channel region. The conductivity of each of the second sub-channel regions is controlled by a floating-gate conductor formed over and insulated from the second sub-channel region. A row line, including control gates, is located above and insulated from the floating gates of the cells for reading, programming and erasing the cells. The field-plate conductor switch provided isolation of the cells during programming.
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申请公布号 |
US5032533(A) |
申请公布日期 |
1991.07.16 |
申请号 |
US19890444585 |
申请日期 |
1989.12.04 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GILL, MANZUR;D'ARRIGO, SEBASTIANO |
分类号 |
H01L21/8247 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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