| 摘要 |
PURPOSE:To reproduce low resistance and high carrier concentration with superior reproducibility, and improve element characteristics and manufacturing yield, by adding specified donor impurity atoms and oxygen atoms to at least one layer of II-VI compound semiconductor layers. CONSTITUTION:An n-ZnSe layer 12 and a p-ZnSe layer 13 as the II-VI compound semiconductor layers are grown on an Si doped n-GaAs substrate 11 as compound semiconductor. An Au electrode 14 is selectively formed on the layer 13. An Au/Ge electrode 15 is formed on the lower surface of the substrate 11. Donar impurity atoms composed of group III or group VII element (e.g. Ga and Cl) and oxygen atoms are added to at least one layer of the layers 12, 13. |
