发明名称 RELIEVING SYSTEM OF DEFECTIVE MEMORY
摘要 PURPOSE:To realize a storage device which is free from defect as a whole, by providing a single or plural spare storage elements plus defect existence indicating memories. CONSTITUTION:A single or plural spare storage elements SO-Sm plus defect existence indicating memories FO-Fm are designated by a part of an address that designates the position of a defective bit within the address of elements of MOO -Mnm plus the chip selection address information. The contents of the memories FO-Fm are read in the same cycle and according to the start of operation of a storage device. Based on these contents, the read/write action is carried out to the elements MOO-Mnm is case the designated address group has no defect and to the elements SO-Sm in case the address group has a defect respectively.
申请公布号 JPS57111893(A) 申请公布日期 1982.07.12
申请号 JP19800187336 申请日期 1980.12.29
申请人 FUJITSU KK 发明人 TAGAMI MASATERU
分类号 G06F12/16;G11C29/00;G11C29/04;H01L21/82 主分类号 G06F12/16
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