| 摘要 |
PURPOSE:To prevent corrosion, and to conduct etching treatment with high yield by forwarding a substance to be treated after the etching of a resist to a second treating unit in a vacuum, sending the substance to post-treatment in the vacuum after treatment and removing the resist and forming a protective film. CONSTITUTION:A cassette is placed onto a base 12, and a device 15 shifts a wafer 14 to a carry-in device 1. Valves 9-11 are closed, a valve 7 is opened, and the wafer is taken into a vacuum chamber 6 by a conveyor 17. The valve 7 is closed, the chamber 6 is evacuated to a required vacuum, and the wafer is forwarded into a chamber 2. The valve 9 is closed, O2+Cl2 are fed, and a resist on the surface of the wafer is plasma-etched. The completion of etching is decided by an emission monitor, the chamber 2 is evacuated, the wafer is taken out by the conveyor 17, and the valve 9 is closed. Etching by a plurality of Cl group gases in the chamber 2, the ashing of the resist in a chamber 4 and the formation of a protective film are performed similarly. The wafer 14 is placed on a stand-by unit 27 and time difference during treatment is eliminated, the wafer is treated under the state of sealing in each chamber 2-4 when the valves 7, 8 are opened, and a series of treatment is executed without exposure to atmospheric air. According to the constitution, the fouling of the wafer can be reduced extremely, and the corrosion of an acid due to a residual halogen element and moisture can be prevented, thus etching the wafer with high yield.
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