| 摘要 |
<p>A method of providing and developing a resist on a substrate (12) for constructing integrated circuits IC chips includes the steps depositing a thin film of amorphous silicon or hydrogenated amorphous silicon (13) on the substrate (12) and exposing portions of the amorphous silicon to low energy oxygen ion beams (14) to oxidize the amorphous silicon at those selected portions. The non-oxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip (16) can then be constructed through the removed portions of the resist (17). The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.</p> |
