| 摘要 |
<p>A method of manufacturing a semiconductor device wherein a resistor (45) of a semiconductor is formed on an insulating layer (42), a silicon nitride film (46) is formed on the whole surface of the insulation layer including the resistor (45), a silicon oxide film (47) is formed thereon, and electrodes (49A), (49B) of the resistor (45) are formed. The fragility of an insulation film (51) on a step part of the resistor (45) is prevented, the disconnections of the electrodes and the wirings are prevented, the disconnections of the electrodes and the wirings are prevented, and the withstanding voltage between the resistor (45) and wirings striding over the resistor (45) and the yield of a semiconductor device are improved. Further, the resistance of the resistor (67) in a high impurity-dose region is decreased by implanting ions of an impurity (64) into a semiconductor film (63) to be used as the resistor to make it into an amorphous semiconductor, by performing a heat treatment of a semiconductor film (63a) in an atmosphere of a hydride gas or/and hydrogen gas, and thereafter by performing the heat treatment for activation to form a resistor (67).</p> |
