| 摘要 |
<p>A photoelectric converting device comprises a first semiconductor area of a first conductive type, a second semiconductor area of a second conductive type, and a third semiconductor area of the first conductive type. A charge is photoelectrically excited by light incident on second semiconductor area, and is derived from the first semiconductor area after amplification. A fourth semiconductor area of the first conductive type is formed in contact with the second semiconductor area and so positioned as to oppose to the third semiconductor area. During an operation of the device, a depletion layer extending from the interface between the second and fourth semiconductor areas reaches a depletion layer extending from the interface between the third and second semiconductor areas. <IMAGE></p> |
