发明名称 |
MASK FOR LITHOGRAPHY |
摘要 |
A mask structure according to an aspect of the invention includes a base having a first zone for an alignment pattern and a second zone for a circuit pattern; an alignment pattern forming material with which the alignment pattern is formed in the first zone; and a circuit pattern forming material with which the circuit pattern is formed in the second zone; wherein the alignment pattern forming material and the circuit pattern forming material are different from each other. |
申请公布号 |
EP0408349(A3) |
申请公布日期 |
1991.07.10 |
申请号 |
EP19900307605 |
申请日期 |
1990.07.11 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
FUKUDA, YASUAKI;NOSE, NORIYUKI |
分类号 |
G03F1/08;G03F1/14;G03F1/16;G03F1/22;G03F1/42;G03F9/00;H01L21/027;H01L21/30;(IPC1-7):G03F1/14 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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