SEMICONDUCTOR MEMORY DEVICE WITH DUMMY CELL ARRAY

摘要

A semiconductor memory device in which data can be read out in response to an address signal comprises power source lines, a plurality of row (WL1 - WLmn) and column conductive lines (COL1 - COLn), a memory cell array (10) including nonvolatile memory cells (M11 - Mmn) arranged in a matrix form of rows and columns and respectively connected to the plurality of row and column lines (COL1 - COLn, WL1 - WLn) and the power source lines, a first selector circuit (5) for generating a signal for selecting the row conductive lines in response to an address signal, a dummy row line (DWL), and dummy memory cells (DM1 - DMn) each having a source, a drain and a control gate connected to the dummy row line (DWL). In the semiconductor memory device, one of paths between the source and the power source line and between the drain and the corresponding row line is closed and the other path is opened, and it further includes a second selector circuit (11) for selectively generating a line selection signal for selecting one of the row conductive lines in response to an address signal and a dummy selection signal for selecting the dummy row line (DWL) in response to the same address signal.