| 摘要 |
PURPOSE:To accurately inspect a resist pattern by forming a predetermined resist pattern on a substrate to be treated, and then dipping the pattern in rinsing liquid containing ion surface active agent. CONSTITUTION:A substrate to be treated is coated with resist, prebaked at about 100 deg.C to be solidified, and exposed by an electron beam exposure method, etc. Then, after it is prewetted to improve moisture of a resist film, it is developed by a liquid raising or spraying method. Thereafter, in order to stop developing, it is rinsed in ion surface active agent. After rinsing, it is dried by a spin drying method. Thus, chargeup of the resist is reduced, and a pattern size near a true measured value can be measured by a scanning electron microscope. |
