| 摘要 |
PURPOSE:To reduce the contact resistance between a transparent electrode and a rear electrode, and improve characteristics of an FF, by inserting a metal thin film or metal oxide between the transparent electrode and the rear electrode. CONSTITUTION:Transparent electrodes 21-23 are divided and arranged in a plurality of regions on a transparent insulating substrate 1. On each electrode, metal thin films 71-73 having large work functions are formed. On the whole surface of each metal film, a semiconductor layer 5 composed of amorphous silicon as an optically active layer is formed, and rear electrodes 61-63 are formed on the layer 5. The semiconductor layer 5 and the rear electrodes 61-63 positioned on an insulating member 41 are eliminated with laser, and each photoelectric conversion region is isolated. The metal thin films 71-73 end the rear electrodes 61-63 are electrically connected by welded parts adjacent to the insulating member 41. |
