摘要 |
<p>A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate (3) consisting of a member selected from the group consisting of sintered compacts of Si or Si3N4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond (7) deposited by gaseous phase synthesis method.</p> |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAMURA, TSUTOMU;TANAKA, KATSUYUKI;NAKAI, TETSUO;IMAI, TAKAHIRO;IKEGAYA, AKIHIKO;FUJIMORI, NAOJI |