| 发明名称 |
Method of integrated circuit manufacturing using deposited oxide. |
| 摘要 |
<p>Contamination of LPCVDBP TEOS films is reduced by preventing volatile compounds, resulting from reactions of the residue in the outlet of the furnace from reaching the deposition portion of the furnace where they would otherwise react with the deposition gases to produce chemically generated particles which contaminate the dielectric film.</p> |
| 申请公布号 |
EP0435477(A2) |
申请公布日期 |
1991.07.03 |
| 申请号 |
EP19900313067 |
申请日期 |
1990.11.30 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
MANOCHA, AJIT SINGH;SINGH RANA, VIRENDRA VIR;ROBERTS, JAMES FRANKLIN;VELAGA, ANKINEEDU |
| 分类号 |
C23C16/40;H01L21/316;C23C16/44;C23C16/54;H01L21/31 |
主分类号 |
C23C16/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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