Semiconductor memory device

摘要

A semiconductor memory device comprises a plurality of memory cells in an array, a plurality of word lines WL, a plurality of bit lines BL, and a plurality of word line drives 10 connected to the word lines. The word lines are twisted in groups of four such that each line is spaced apart from its immediately adjacent neighbouring line over part of its length and is arranged such that the coupling capacitances between lines is reduced. The word line drivers are arranged on opposite sides of the array in a way which permits optimisation of the layout of a memory device.