Semiconductor device and a method of fabricating the same.

摘要

A semiconductor device comprises a semiconductor substrate (1) provided with a collector region (62) a base region (60) and an emitter region (61) in a lateral arrangement. Respective portions having peak impurity concentrations of the collector region and the emitter region are formed within the semiconductor substrate. A method of fabricating a semiconductor device comprises a step of forming a collector region of a second conduction type and a emitter region of a second conduction type in a lateral arrangement in a semiconductor substrate serving as a base region of a first conduction type by using a first mask provided with a pair of openings, and a step of forming heavily doped regions of the second conduction type so as to be connected respectively to the collector region and the emitter region by using a second mask provided with a pair of openings separated from each other by a distance greater than the distance between the openings of the first mask. <IMAGE>