| 摘要 |
<p>A method of fabricating a semiconductor devices, comprising the steps of:- (1) forming a plurality of insulating films (22, 23; 42, 43, 44; 62, 63, 64; 82, 83, 84; 102, 103, 104; 122, 123, 124) on a base layer (21; 41; 61; 81; 101; 121), said plurality of insulating films comprising at least a lower layer insulating film (22, 43; 63; 83; 103; 123) and an upper layer insulating film (23; 44; 64; 84; 104; 124), said lower layer insulating film being smaller in etch rate than said upper layer insulating film and serving as an etching stopper, and forming a first opening portion (24; 45; 65; 86; 106; 126) by etching said upper layer insulating film, and exposing said lower layer insulating film in said first opening portion, and forming a second opening portion (25; 47; 67; 88; 108; 128) smaller in width than said first opening portion by etching said lower layer insulating film, at a location beneath said first opening portion, and exposing said base layer in said second opening portion; then (2) forming a metal layer (26; 48; 68; 89; 109; 129) in said first and second opening portions so that it can contact with said base layer exposed in said second opening portion; then (3) burying said metal layer in said first and second opening portions and planarising the buried metal layer by irradiating said metal layer with a laser beam (30; 52; 92). <IMAGE></p> |
