| 摘要 |
<p>A semiconductor device having internally limited current and overvoltage protection is disclosed and comprises having at least a first junction (40,96) wherein both sides of the junction (40,96) have predetermined dopant concentrations and wherein the first junction (40,96) is spaced apart a predetermined distance from either a second junction (42) or current blocking means (108). The predetermined dopant concentrations and distance are such that when a predetermined voltage is applied to the device (10,82), a depletion region (44, 110) from the first junction (40,96) encounters either a depletion region (44) from the second junction (42) or current blocking means (108), thereby pinching-off current at a desired voltage. The pinch-off voltage may be varied by adjusting the distance between the first junction (40,96) and either the second junction (42) or current blocking means (108) and also by adjusting the predetermined dopant concentrations. <IMAGE></p> |
