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发明名称
Method of forming silicon dioxide glass films
摘要
The manufacture of semiconductor devices and, specifically, deposition of SiO2 films on semiconductor devices by oxidative decomposition of oligo siloxanes at low temperature is disclosed.
申请公布号
US5028566(A)
申请公布日期
1991.07.02
申请号
US19900559009
申请日期
1990.07.27
申请人
AIR PRODUCTS AND CHEMICALS, INC.
发明人
LAGENDIJK, ANDRE
分类号
H01L21/316
主分类号
H01L21/316
代理机构
代理人
主权项
地址
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