| 摘要 |
An improved transistor, an improved lead frame for use in transistor manufacture, and manufacturing methods for transistors are disclosed. The improved transistor lead frame has a premolded housing thereon which covers a substantial portion of the chip-mounting surface of the transistor heat sink. A chip-receiving cavity is provided in the molded housing which extends to the chip-receiving surface and conforms to the shape of the chip. Solder-receiving bays or bins extend laterally from the cavity to receive excess solder during bonding of the chip to the lead frame. The premolded housing surrounds the chip after it is bonded to the lead frame and when the conductors from the transistor leads to the chip are bonded in place, the housing protects these leads during subsequent handling. The hollow interior of the housing is filled with a silicone gel which encapsulates the conductors in the housing and a harder insulating material, such as epoxy, is applied over the gel.
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