| 摘要 |
PURPOSE:To remove scum in a photoresist pattern without giving rise to a decrease in the thickness of each resist as well as shift and the like in pattern dimensions by irradiating, in the presence of oxygen, selective regions in the photoresist pattern which is formed on a semiconductor substrate with ultraviolet rays. CONSTITUTION:A gate oxide film 3 is formed while forming source and drain regions 2 on a silicon substrate 1. A polysilicon gate electrode 4 is formed on the gate oxide film 3 and the whole of the film 3 is covered with an insulating film 5. A photoresist 6 is formed selectively on the insulating film 5 and the scum of the photoresist pattern 6 on the source and drain regions 2 are not well removed and then, the development of pieces of scum 7 takes place. Subsequently, these scummy parts 7 are irradiated with a He-Cd laser light 8 in the air and oxygen radicals are produced by exciting oxygen molecules and then, resists only in the vicinity of irradiating parts are decomposed into ashing. After completion of the above irradiation, contact hole patterns which are free from any scum 7 are formed with high accuracy. Removal of scum 7 is performed partially without causing pattern dimension shift and decreasing resist films. |
