| 摘要 |
A method of manufacturing a semiconductor device of the "planar" type comprising a highly doped substrate having a doping concentration co and an epitaxial surface layer having a carrier concentration c<co, in which are formed a main pn junction having a depth xj and a structure of floating guard rings. According to the invention, this device also includes between the substrate and the epitaxial surface layer, a second epitaxial layer having a carrier concentration c' such that co>c'>c. This permits the production of devices with different maximum operating voltages using the same configuration of guard rings.
|
