| 摘要 |
PURPOSE: To provide the static RAM of low power using only a small space by arranging a poly-crystalline silicon diode load above the gate electrodes of cross-connected elements inside a memory cell. CONSTITUTION: A static RAM cell comprises first and second cross-connected MOS transistors 12 and 14 and the respective transistors 12 and 14 are provided with the gate electrodes 32 and 40, drains 34 and 42 and sources 36 and 24. Conductive diffusion barrier layers 46 and 52 are piled up on the respective gate electrodes 32 and 40 and two poly-crystalline silicon layers 48, 50, 54 and 56 doped in opposite conductive types are piled up and formed on the barrier layers 46 and 48. The conductive diffusion barrier layer 46 on the first transistor 12 within the two transistors is connected to the drain 42 of the second transistor 14 and the conductive diffusion barrier layer 52 on the second transistor 14 is connected to the drain 34 of the first transistor 12. Thus, the size of the cell is made small and the power consumed by respective memory cells is made small. |
