发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To increase the speed of operation and lower the consumption power ratio by providing a means which selects different potentials and drives a cell block selecting means, an I/O line, a low decoder, a column decoder, a data buffer, and a bit line I/O line. CONSTITUTION:A buffer 211 which possesses an I/O sense amplifier 111 are connected to I/O01, -I/O01 common to cell blocks CA0, CA1. A first pre-charger 131 which makes the I/O line pair to (1/2)Vcc as same as bit lines BL pair, and a second pre-charger 121 which make them Vcc are provided in a buffer 211. An I/O control circuit 141 selects and drives this I/O buffer 211 by a precharge control signal CEQ and a sense control signal. Selection signals -BSL1, -BSL0 are inputted to the control circuit 141, and when the CA0 or the CA1 are selected, precharger 131, 121 are turned on and off selectively and executes a (1/2)Vcc precharge, the standard potential of the sense amplifier 111 rises to Vcc, and the I/O line pair is also precharged to Vcc.
申请公布号 JPH03154287(A) 申请公布日期 1991.07.02
申请号 JP19890292162 申请日期 1989.11.13
申请人 TOSHIBA CORP 发明人 NUMATA KENJI;FUJII HIDETAKE
分类号 G11C11/401;G11C7/06;G11C7/10;G11C7/12;G11C8/12;G11C11/409;G11C11/4091;G11C11/4094;G11C11/4096;G11C11/41;H01L21/8242;H01L27/108 主分类号 G11C11/401
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