| 摘要 |
A sense amplifier circuit is associated with at least one memory cell and comprises a series combination of a first p-channel type transistor and a second n-channel type transistor coupled between a source of positive voltage level and a first input node, a first negative feedback loop coupled between the first input node and the second n-channel type transistor, a series combination of a third p-channel type transistor and a fourth n-channel type transistor coupled between the source of positive voltage level and a second input node, a second negative feedback loop coupled between the second input node and the fourth n-channel type transistor, an output circuit coupled to the first and third n-channel type transistors in a current-mirror fashion and producing an output data signal, and first and second load elements respectively coupled between the first and second input nodes and a ground node, wherein each of the first and second load elements is smaller in conductance than the memory cell and restricts the associated input node to excessively fluctuate upon a change of memory cell to be accessed.
|
