| 摘要 |
<p>PURPOSE:To shift with sufficient threshold by providing a source selection transistor with the same gate as a word line between the source of a memory transistor and a source transistor for every byte. CONSTITUTION:A transfer gate transistor Tr18 is provided between the source 7 of a memory Tr2 and the drain 19 of a source Tr10, and its gate is a word line 4. Here, when executing a write-in to a memory Tr201, the Tr18 is selected because the word line 4 is selected, and the source 7 is connected to the source line 19. But, for memory Tr which are not selected, for example the transfer gate Tr205 of Tr202-204 which connect its source line and source line, is not selected, and the source line 19 and the source 7 are not connected. Thus, the load which must be charged at high voltage becomes only the amount for the non-selection source selection Tr amount. Thus, sufficient high voltage is impressed to memories Tr, and a shift amount with sufficient threshold can be obtained.</p> |
