| 摘要 |
<p>PURPOSE:To securely insulate a gate electrode and a semiconductor layer, and an electrode for capacity formation and a picture element electrode from each other by forming a gate insulating layer of an oxide insulating layer and a gate insulating film in two-layered structure and forming a charge storage capacitor of an oxide insulating film and a gate insulating film in two layered structure with an insulating layer interposed. CONSTITUTION:The gate insulating film between the gate electrode 13a of a thin film transistor (TFT) 12 and a semiconductor layer is formed in two-layered structure of the oxide insulating layer 21b, formed by oxidizing the upper layer part of a metallic film 21 forming the gate electrode 13a, and the gate insulating film 14 formed thereupon. Further, the charge storage capacitor Cs is also structured by interposing the insulating layer in two-layered structure of the oxide insulating film 21b and the gate insulating film 14 laminated thereupon between the charge storage capacitor Cs and electrode 19 for capacity formation. Consequently, even if a defect such as a pinhole in the gate insulating film 14 is present thereon, the gate electrode 13a and semiconductor layer, and the electrode 19 for capacity formation and picture element electrode 20 can securely be insulated by the gate insulating layer and oxide insulating film 21b respectively.</p> |
