| 摘要 |
<p>PURPOSE:To prevent the conductive conditions during depression with a nonselected memory so as to enable the large capacity advacement of memories by applying positive voltage to the gates of the memories, and grounding one hand of a source to the GND level, and connecting one of a resistor to the other hand, and then connecting the other hand of the resistor to positive high voltage power source, when taking off the electrons within a charge trap level. CONSTITUTION:At elimination, a drain 4 is earthed (VG=VS=GND), and positive voltage VG, for example, 2V is applied to a gate electrode 1. The source 3 of a memory is connected to a resistor, that is, a transistor, and the other hand of the resistor is connected to a high voltage power source VPP. Shifting it in the direction where VTH becomes small by eliminating it, when VTH becomes 2V by VG=2V, the elimination is completed in enhanced conditions, so even if memories are arranged in matrix conditions, it can do normal operation.</p> |
