| 摘要 |
The invention relates to a GTO-thyristor in a silicon disc which has on one side thereof an n-layer which is covered by an anode contact (50) and which on its opposite side is covered by a p-conducting base layer (51) on which a cathode structure and a gate structure are built. The cathode structure is comprised of upstanding islands having a greatest cross-dimension of 10-100 mu m or less, each having an n-layer (52) resting on a raised part of the base layer. The gate-electrodes (60) form a network which surrounds the islands on all sides thereof without being in contact therewith. This structure enables the islands to be given small dimensions, according to a method which only requires one sole fine-detailed mask, with the aid of etching, oxidizing and applying operations. |
