| 摘要 |
PURPOSE:To obtain a semiconductor device whose moistureproof property is high by a method wherein a sidewall of a surface insulating layer does not come into contact with a molding resin and is covered with a metal. CONSTITUTION:Side faces of surface insulating layers 4, 5 are covered with an upper-layer pad part 7 and with a ball part 8 of a bonding wire 9 and do not come into contact with a molding resin. Consequently, moisture which has penetrated the molding resin does not reach exposed sidewalls of the surface insulating layers 4, 5. When the surface protective layers 4, 5 are composed of, e.g. a PSG layer 4 and an SiN layer 5, the moisture in the molding resin cannot reach the PSG layer 4 and it is possible to prevent phosphorus from being dissolved out from the PSG layer 4. The upper-layer pad part 7 is provided with an uneven surface. The ball part 8 of the bonding wire 9 comes into contact with the uneven surface of the upper-layer pad part 7. As a result, a bonding power of the bonding wire is increased. |
