| 摘要 |
PURPOSE:To make it possible to record information in high density and record and delete information at high speed by providing a semiconductor film containing a specific atomic number of at least two types of element selected from a specific element group and having an energy band in specific relationship. CONSTITUTION:The recording medium consists of a substrate and a semiconduc tor film. When information is recorded, reproduced or deleted by emitting light, the semiconducotr film contains 90 to 100 atomic number % of at least, two types of element selected from a group of Si, Ge, Sn and C. When the wave length of light emitted for recording information is given as lambda1, the wavelength of light emitted for reproducing information as lambda2, the wavelength of light emitted for deleting information as lambda3 and a blank constant as h, the energy band Eb of the semiconductor film is in a relationship as shown by the formula. The semiconductor film contains 0.001 to 10 atomic number% of at least, one type of element selected from a group of H, F and Cl. |
