| 摘要 |
PURPOSE:To improve a semiconductor device in reliability under environmental conditions such as high temperature and high humidity by a method wherein a bonding pad of three-layered structure composed of an Al film, a high melting metal film or a high melting metal silicide, and an Al film is formed on an insulating film deposited on a semiconductor substrate. CONSTITUTION:An Al film 3, a film 4 of high melting point metal or its silicide such as tungsten silicide, and an Al film 5 are successively laminated on Si oxide 2 deposited on an Si substrate 1, which is patterned into a bondind pad of three-layered structure through etching processes which are successively and selectively performed. Then, a plasma oxynitride passivation film 6 is deposited on the whole surface, and only the film 6 deposited on a bonding pad is removed to provide an opening.
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