| 摘要 |
<p>PURPOSE:To protect inner leads against deformation and to enable positioning, wire-bonding, and the like to be accurately executed so as to improve a semiconductor device in quality and reliability by a method wherein only the region of a lead frame including the inner leads and a stage is annealed to remove residual stress induced in the lead frame due to the process history. CONSTITUTION:The outer region of a strip material of a lead frame 1 including a dam bar 7 is masked, the strip material is introduced into an annealing oven of high frequency heating type and the region of the lead frame 1 which includes only inner leads 6 and a stage 4 is thermally treated. By this setup, reference pin holes 3, outer leads 8, and dam bars 7 are prevented from being thermally deformed, so that positioning can be accurately executed in assembling and a semiconductor device of this design can be improved in quality and reliability.</p> |
