发明名称 DEVICE FOR VACUUM TREATMENT AND DEVICE FOR AND METHOD OF FILM FORMATION USING SAID DEVICE
摘要 A vacuum treatment device for conducting various treatments of wafers in a vacuum tank and a method of film formation using said device, which is characterized in that temperature control of the wafers during film formation is performed using a radiation thermometer and, in particular, wafers are conveyed to each stage in a vacuum film forming chamber after emissivities thereof are corrected by a temperature correction stage in combination with the shutter, and are temperature-controlled to a fixed temperature to form a film thereon.
申请公布号 WO9109148(A1) 申请公布日期 1991.06.27
申请号 WO1990JP01601 申请日期 1990.12.10
申请人 HITACHI, LTD. 发明人 OKAMOTO, AKIRA;KOBAYASHI, SHIGERU;SHIMAMURA, HIDEAKI;TSUZUKU, SUSUMU;NISHITANI, EISUKE;KISHIMOTO, SATOSHI;YONEOKA, YUJI
分类号 C23C14/50;C23C14/54;C23C14/56;C23C16/458;C23C16/46;H01L21/00;H01L21/683 主分类号 C23C14/50
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