发明名称 NONVOLATILE SEMICONDUCTOR STORAGE
摘要 <p>PURPOSE:To attain a high-speed reading operation even with a slight cell current by using a flip-flop type sense amplifier. CONSTITUTION:A flip-flop type sense amplifier 8 consists of transistors Q4 - Q9. A normal sense amplifier, e.g., an inverter reads out data on the boundary of the set logical threshold value, e.g., 2.5V. That is, the output data are inverted when the input of an amplifier is changed to 2.5V from 0V or to 2.5V from 5V. Therefore the input of the amplifier must change by 2.5V for inversion of the output data of the sense amplifier. Meanwhile the amplifier 8 can satisfac torily read out the data with about several hundreds of mV required for the difference between two inputs since the input having a higher voltage level is set at 5V with the other input of a lower voltage leve set at 0V respectively. As a result, the input has no large change and the data can be read out at a high speed.</p>
申请公布号 JPH03150794(A) 申请公布日期 1991.06.27
申请号 JP19890290863 申请日期 1989.11.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 HAYAKOSHI MASANORI
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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