发明名称 FORMING METHOD FOR FINE PATTERN
摘要 PURPOSE:To form an accurate fine pattern by using a metal film of tungsten, etc., formed with a mask of an upper layer by an optical exciting depositing method. CONSTITUTION:After a mask pattern of a direct tungsten film 6 is formed on a photoresist layer 4 of a base by an optical exciting depositing method, with the film 6 as a mask the layer 4 is photosensed and developed. A thin film can accurately be formed by the selective formation of the metal film by the optical exciting depositing method, and the obtained film has high light shielding function as a satisfactory mask. Thus, similar fine pattern can accurately be formed except a 2-layer resist structure.
申请公布号 JPH03150833(A) 申请公布日期 1991.06.27
申请号 JP19890290870 申请日期 1989.11.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 YONEDA MASAHIRO;TOKUI AKIRA
分类号 G03F7/26;G03F7/20;H01L21/027 主分类号 G03F7/26
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