| 摘要 |
PURPOSE:To provide a multi-wavelength integrated semiconductor laser with a simplified process by controlling oscillation frequency by heating a plurality of portions which are to be active regions such that the degrees of mutual diffusion between a well layer and a barrier layer is different. CONSTITUTION:There are grown in order on a p-GaAs substrate 1 a p-AlGaAs cladding layer 2, a GaAs/AlGaAs quantum well layer 3, and an n-AlGaAs clad ding layer 4, and dielectric films 5a, 5b of different material qualities or differ ent film thickness are formed into a stripe shape on surfaces of portions which are to be laser active regions. Then, Zn is selectively diffused into portions excepting the active region so as to reach the p-AlGaAs cladding layer 2, and simultaneously portions excepting the active region of the quantum well layer 3 is disordered. In this case, oscillation frequency is controlled by heating portions to be a plurality of the active regions of a double hetero structure having the quantum well active layer such that degrees of mutual diffusion are different between the well layer and the barrier layer in each region. Here by, a multi-wavelength integrated laser can be manufactured with a simplified process.
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