发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
<p>PURPOSE:To keep the signal delay constant over a wide temperature range by applying temperature correction to an output load of a semiconductor circuit to keep the signal delay constant. CONSTITUTION:A prescribed load capacitor C1 connects to a signal line 2 at the output side of a semiconductor circuit 1 being an object to temperature correction via a MOS TR 3 and a diode level V1 is applied to a gate of the MOS TR 3. The diode level V1 is a high level terminal voltage of diodes 4 connected in series of n-stage with a prescribed current flowing therethrough having a negative temperature coefficient. Then the gate level of the MOS TR 3 is controlled against a change in ambient temperature to control the load capacitor C1 connecting to the signal line 2 thereby applying temperature correction to the output load of the semiconductor circuit 1 and keeping the signal delay constant. Thus, the signal delay over a wide temperature range is kept constant.</p> |
申请公布号 |
JPH03150922(A) |
申请公布日期 |
1991.06.27 |
申请号 |
JP19890289122 |
申请日期 |
1989.11.07 |
申请人 |
FUJITSU LTD;FUJITSU VLSI LTD |
发明人 |
KAWABATA SHOZO |
分类号 |
G11C11/407;G11C11/4076;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H03K5/13;H03K19/0175 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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