| 摘要 |
PURPOSE:To solve problems of light emission efficiency, yield, and reliability, etc., being lowered by LPE(liquid phase epitaxial)-growth of an active layer for performing optical amplification on a striped mesa directly or through a predetermined LPE growth layer, isolated from parts other than the striped mesa. CONSTITUTION:A striped mesa part m is formed on the upper surface of an N-InP substrate 11 into an island shape, interrupted longitudinally of a device, on which substrate 11 there are grown four layers of an N-InP buffer layer 12, an InGaAsP active layer 13, a P-InP cladding layer 14, and a P-InGaAsP contact layer 15. The InGaAsP active layer 13 is grown such that its part on the upper part of the mesa part m is separated from other parts thereof, and about 2mum width thereof is buried in the P-InP cladding layer 14, whereby the so-called buried hetero structure is formed with the once LPE growth. Thus, since an end face radiation type LED of a window structure can be manufactured with the once LPE growth, there are eliminated problems on the manufacture which might be caused by lowering of light emission efficiency, yield, or reliability, etc. |
