| 摘要 |
<p>PURPOSE: To obtain a writable integrated circuit constitution having a reverse fuse of a small leaked current by forming a reverse fuse substance, put into contact with 1st and 2nd conductors in an aperture formed on an insulating layer on the 1st conductor and using an amorphous silicon film adhesively formed by the used of a plasma-enhanced CVD. CONSTITUTION: A 1st conductor 33 is formed, an insulating layer 34 is formed on the surface of the 1st conductor 33, and an aperture 39 terminated on a part of the 1st conductor 33 is formed on a selected position through the layer 34. Then amorphous silicon film is adhesively formed on the surface of the layer 34 and in the aperture 39 as a pattern by the use of a plasma-enhanced CVD, and an amorphous silicon feature part 35 substantially restricted by the aperture 39 on the selected position and having an area put into contact with the completely superposed to the 1st conductor 33 is formed. Then a 2nd conductor 36 put into partial contact with and superposed to the amorphous silicon area is formed.</p> |
