| 发明名称 |
Semiconductor device having bipolar-MOS composite element pellet suitable for pressure contacted structure. |
| 摘要 |
<p>A semiconductor device having a bipolar MOS composite element pellet suitable for a compression structure. In this pellet, a semiconductor substrate (10) on which a MOS composite element is formed is electrically connected to an external part by an electrode plate (44, 48, 52) compressed to the substrate (10).</p> |
| 申请公布号 |
EP0433650(A1) |
申请公布日期 |
1991.06.26 |
| 申请号 |
EP19900121685 |
申请日期 |
1990.11.13 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOKOTA, YOSHIO, C/O INTELLECTUAL P. DIV.;KITAGAWA, MITSUHIKO, C/O INTELLECTUAL P. DIV.;KARASAWA, DAI, C/O INTELLECTUAL P. DIV. |
| 分类号 |
H01L23/48;H01L23/482;H01L29/417;H01L29/739 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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