Selective area chemical vapour deposition.

摘要

A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber (30) and limits the deposition to that area. The surface to be coated is on a substrate (38) around which is positioned a ring (42) which defines a small annular gap between itself and the substrate through which a flow of inert gas (52, 54) is passed. This shields the rear side and edge of the substrate from deposition without interfering with deposition on the side to be coated. <IMAGE>