发明名称 RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To allow development without generating corrosion of Al by developing a prescribed resist with an org. solvent. CONSTITUTION:The resist 1 contg. an alkali-soluble resin (e.g.: novolak resin), a dissolution restrainer (e.g.: melamine compd.) and acid generator (e.g.: biphenyl compd.) is applied on the surface of a substrate deposited with a thin film 2 of Al by evaporation on an Si substrate 3 and is heat treated. The resist is then exposed with an electron beam 4 and an org. solvent (e.g.: isobutyl alcohol) is injected from a nozzle 5 to dissolve the unexposed parts. The resist is then rinsed and resist patterns 8 are formed. The patterns are developed by the org. solvent, by which the patterns 8 are formed without corroding the film 2.
申请公布号 JPH03148660(A) 申请公布日期 1991.06.25
申请号 JP19890287421 申请日期 1989.11.06
申请人 MATSUSHITA ELECTRON CORP 发明人 WATANABE HISASHI
分类号 G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址