| 摘要 |
In a fast power semiconductor circuit with a gate turn-off component in the form of a large-area semiconductor substrate (9) and a drive circuit, which is connected to gate and cathode of the component and generates a current pulse suitable for turning off the component, a low-inductive connection is realized between component and drive circuit by a stripline (28) in the form of a metal-laminated plastic film. The upper metallization (1) of the stripline (28) serves in this case essentially as feed to the cathode of the component, the lower metallization (3) serves essentially as feed to the gate.
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