Semiconductor memory device having circuit for reading-out and writing-in of data

摘要

Disclosed is a semiconductor memory device having a circuit integrally comprising both functions as the sense amplifier circuit for operating when reading out data from the memory cell and as the drive circuit for operating when writing data into the memory cell. By such structure, fast and stable operation of the semiconductor memory device is realized, and the area of the portions corresponding to the sense amplifier circuit and drive circuit can be reduced, so that higher density and higher degree of integration of semiconductor memory device may be realized.