发明名称 |
High voltage, high speed Schottky semiconductor device and method of fabrication |
摘要 |
A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resistive layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.
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申请公布号 |
US5027166(A) |
申请公布日期 |
1991.06.25 |
申请号 |
US19880277333 |
申请日期 |
1988.11.29 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
OHTSUKA, KOJI;KUTSUZAWA, YOSHIRO;OGATA, KIMIO;ICHINOSAWA, HIDEYUKI |
分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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