VERTICAL TYPE DMOS TRANSISTORS CELL

摘要

The cell structure is formed by P-type diffusion region in a N- epitaxial layer on a N-type Si substrate (1). The P-type diffusion region has a shape in which a circle is circumscribed to the hexagon and the radius of the circle is one side length of the hexagonal cell. Alternatively spaced three sides are formed by the circumscribing circumference and another three sides are formed by symmetrising the circumscribing circumference to each sides of the hexagon. A N+ region having a constant width is formed along the inside perimeter of the P-type diffusion region. The cell has a structure extending the channel width to improve current transfer capability.