Resonant-tunneling heterojunction bipolar transistor device

摘要

A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer, a base layer, a collector layer facing the base layer to form a PN junction at the interface between the base layer and the collector layer, and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough. The superlattice is formed at least in the emitter layer and faces. The RHBT has a differential negative resistance characteristic for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.